Published May 1989 | Version v1
Journal article Metadata-only

Influence of electron irradiation on the properties of indium phosphide doped with 3d elements

Creators

  • 1. M. I. Kalinin Polytechnic Institute, Leningrad (USSR)

Description

It would be of considerable interest to study the effects of doping of indium phosphide with 3d elements used in preparation of the semiinsulating material. The aim was to investigate the influence of electron irradiation on electrical and optical properties of InP doped with Cr, Fe, or Mn. The published data were supplemented by a determination of the ionization energies of these impurities

Additional details

Publishing Information

Journal Title
Soviet Physics - Semiconductors (English Translation)
Journal Volume
23
Journal Issue
5
Series
Sov. Phys. - Semicond. (Engl. Transl.).
Journal Page Range
581-582
ISSN
0038-5700
CODEN
SPSEA

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
21070830
Subject category
S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Numerical Data, Translation
Descriptors DEI
CHROMIUM; DATA PROCESSING; DOPED MATERIALS; ELECTRICAL PROPERTIES; ELECTRON BEAMS; EXPERIMENTAL DATA; INDIUM PHOSPHIDES; IRON; MANGANESE; MEASURING INSTRUMENTS; MEASURING METHODS; OPTICAL PROPERTIES; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; USSR
Descriptors DEC
BEAMS; DATA; DEVELOPED COUNTRIES; ELEMENTS; EUROPE; INDIUM COMPOUNDS; INFORMATION; LEPTON BEAMS; MATERIALS; METALS; NUMERICAL DATA; PARTICLE BEAMS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; RADIATION EFFECTS; TRANSITION ELEMENTS

Optional Information

Notes
Cover-to-cover translation of Fizika i Tekhnika Poluprovodnikov (US SR).