Published May 2010 | Version v1
Journal article Metadata-only

Extrinsic Base Surface Passivation in High Speed 'Type-II' GaAsSb/InP DHBTs Using an InGaAsP Ledge Structure

Creators

  • 1. Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China)

Description

Type-II GaAsSb/InP DHBTs with selectively-etched InGaAsP ledge structures are fabricated and characterized for the first time. The novel InGaAsP/GaAsSb/InP DHBTs with a 20 nm lattice-matched GaAsSb base and a 75 nm InP collector have a dc current gain improvement by a factor of 2 and a cutoff frequency fT of 190 GHz. The InGaAsP ledge design provides a simple but effective approach to suppress the extrinsic base surface recombination and enable GaAsSb/InP DHBTs to further increase the operating frequencies and integration levels for millimeter wave applications

Availability note (English)

Available from http://dx.doi.org/10.1088/0256-307X/27/5/058502

Additional details

Identifiers

DOI
10.1088/0256-307X/27/5/058502;

Publishing Information

Journal Title
Chinese Physics Letters
Journal Volume
27
Journal Issue
5
Journal Page Range
[3 p.]
ISSN
0256-307X
CODEN
CPLEEU

INIS

Country of Publication
China
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45000329
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S77: NANOSCIENCE AND NANOTECHNOLOGY; S36: MATERIALS SCIENCE;
Descriptors DEI
ANTIMONIDES; DIRECT CURRENT; GAIN; GALLIUM ARSENIDES; GHZ RANGE; INDIUM PHOSPHIDES; NANOSTRUCTURES; PASSIVATION; RECOMBINATION; SURFACES
Descriptors DEC
AMPLIFICATION; ANTIMONY COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CURRENTS; ELECTRIC CURRENTS; FREQUENCY RANGE; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES