Published June 17, 2021 | Version v1
Journal article

Nitrogen induced localised-state ensemble effect on multi quantum well GaInNAs with low indium concentration

  • 1. School of Computer Science and Electronic Engineering, University of Essex, Colchester CO4 3SQ (United Kingdom)
  • 2. Faculty of Electrical and Electronic Engineering, Universiti Tun Hussein Onn Malaysia, Parit Raja 86400, Johor (Malaysia)
  • 3. Department of Physics, Faculty of Science, Istanbul University, Vezneciler, Istanbul 34134 (Turkey)
  • 4. Microelectronics and Nanotechnology-Shamsuddin Research Center, Universiti Tun Hussein Onn Malaysia, Parit Raja 86400, Johor (Malaysia)

Description

In this paper, temperature dependence photoluminescence has been taken on two multi-quantum well GaInNAs, with low indium composition and the impact of percentage nitrogen incorporation ⩽1%. The variation of peak energy position, linewidth, and integrated intensity emission have been investigated by adopting a localised state ensemble model to anticipate the dissimilar spontaneous emission mechanisms of the two samples. A good agreement has been observed between theoretical analysis and experimental data and enriches the understanding of the design and provides improvement opportunities for future GaInNAs based optoelectronic devices for biomedical applications. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1361-6463/abead8

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Physics. D, Applied Physics
Journal Volume
54
Journal Issue
24
Journal Page Range
[9 p.]
ISSN
0022-3727
CODEN
JPAPBE