Published September 15, 2010
| Version v1
Journal article
Radiation induced modification in nanoscale hardness of ZnO cone structures
Creators
- 1. Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016 (India)
- 2. Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, 110 8th St., Troy, New York 12180 (United States)
- 3. Department of Mechanical, Aerospace and Nuclear Engineering, Rensselaer Polytechnic Institute, 110 8th St., Troy, New York 12180 (United States)
- 4. UGC-DAE, Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452017 (India)
- 5. Inter-University Accelerator Centre, Aruna Asaf Ali Marg, Post Box 10502, New Delhi 110067 (India)
Description
In this paper, the effect of ion irradiation on nanoscale hardness of ZnO microcones is reported. The hardness of ZnO cones determined by nanoindentation using atomic force microscope initially increases from 4.7±1.4 to 9.5±1.6 GPa after irradiation with 1.2 MeV Ar+8 ions at an ion fluence of 1015 ions cm-2 and then decreases with increasing ion fluence. This change in mechanical hardness has been correlated with the residual stress of the sample revealed by Raman peak shift in the E2(H) mode. These results show that the generally reported radiation-hard nature of ZnO depends critically on irradiation conditions, especially the irradiation temperature.
Additional details
Identifiers
- DOI
- 10.1063/1.3482026;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 108
- Journal Issue
- 6
- Journal Page Range
- p. 063519-063519.6
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42069904
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ARGON IONS; ATOMIC FORCE MICROSCOPY; HARDNESS; IRRADIATION; MEV RANGE; MODIFICATIONS; MULTICHARGED IONS; NANOSTRUCTURES; PHYSICAL RADIATION EFFECTS; PRESSURE RANGE GIGA PA; RAMAN SPECTRA; RESIDUAL STRESSES; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; CHARGED PARTICLES; ENERGY RANGE; IONS; MATERIALS; MECHANICAL PROPERTIES; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; PRESSURE RANGE; RADIATION EFFECTS; SPECTRA; STRESSES; ZINC COMPOUNDS
Optional Information
- Notes
- (c) 2010 American Institute of Physics