Published June 2009 | Version v1
Journal article

Size dependence of biexciton binding energy in single InAs/GaAs quantum dots

  • 1. SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
  • 2. Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China)

Description

This paper studies the size dependence of biexciton binding energy in single quantum dots (QDs) by using atomic force microscopy and micro-photoluminescence measurements. It finds that the biexciton binding energies in the QDs show 'binding' and 'antibinding' properties which correspond to the large and small sizes of QDs, respectively. The experimental results can be well interpreted by the biexciton potential curve, calculated from the exciton molecular model and the Heitler–London method

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-1056/18/6/025

Additional details

Identifiers

Publishing Information

Journal Title
Chinese Physics. B
Journal Volume
18
Journal Issue
6
Journal Page Range
p. 2258-2263
ISSN
1674-1056