Published June 2009
| Version v1
Journal article
Size dependence of biexciton binding energy in single InAs/GaAs quantum dots
Creators
- 1. SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
- 2. Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China)
Description
This paper studies the size dependence of biexciton binding energy in single quantum dots (QDs) by using atomic force microscopy and micro-photoluminescence measurements. It finds that the biexciton binding energies in the QDs show 'binding' and 'antibinding' properties which correspond to the large and small sizes of QDs, respectively. The experimental results can be well interpreted by the biexciton potential curve, calculated from the exciton molecular model and the Heitler–London method
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-1056/18/6/025Additional details
Identifiers
Publishing Information
- Journal Title
- Chinese Physics. B
- Journal Volume
- 18
- Journal Issue
- 6
- Journal Page Range
- p. 2258-2263
- ISSN
- 1674-1056
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44123825
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY; S74: ATOMIC AND MOLECULAR PHYSICS;
- Descriptors DEI
- ATOMIC FORCE MICROSCOPY; BINDING ENERGY; EXCITONS; GALLIUM ARSENIDES; HEITLER-LONDON THEORY; INDIUM ARSENIDES; MOLECULAR MODELS; PHOTOLUMINESCENCE; POTENTIALS; QUANTUM DOTS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; EMISSION; ENERGY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LUMINESCENCE; MATHEMATICAL MODELS; MICROSCOPY; NANOSTRUCTURES; PHOTON EMISSION; PNICTIDES; QUASI PARTICLES