Published September 2005 | Version v1
Journal article

Numerical modeling and investigation of liquid phase epitaxy of Hg1-xCdxTe infrared detectors

  • 1. Kristallographisches Institut der Universitaet Freiburg (Germany)
  • 2. Department of Mechanical Engineering, Southern Taiwan University of Technology (Taiwan)
  • 3. AEG Infrarot-Module GmbH, Heilbronn (Germany)

Description

Numerical investigations have been performed for modeling the global temperature field of an industrial liquid phase epitaxy (LPE) facility and to estimate the temperature fluctuations in a Te-rich solution during the LPE growth. The numerical results agreed well with experimental data and therefore provide reliable reference points for experimenters for further improvements of the growth conditions. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/crat.200410442

Additional details

Identifiers

Publishing Information

Journal Title
Crystal Research and Technology
Journal Volume
40
Journal Issue
9
Journal Page Range
p. 832-838
ISSN
0232-1300
CODEN
CRTEDF

Optional Information

Notes
With 7 figs., 2 tabs., 13 refs.. SICI: 0232-1300(200509)40:9<832::AID-CRAT200410442>3.0.TX;2-4