Electrodeposition of copper-doped SnS thin films and their electric transmission properties control for thermoelectric enhancement
- 1. Beijing University of Chemical Technology, State Key Laboratory of Chemical Resource Engineering, Beijing Key Laboratory of Electrochemical Process and Technology for Materials (China)
Description
The thermoelectric performances of SnS are gradually noticed because of its structure similarity to SnSe which has the highest known thermoelectric performance. But the low electric transmission properties of SnS confines its thermoelectric performances. In this paper, we prepared Cu-doped SnS thin films with electrodeposition method. The Cu-doping content of the thin films were controlled by the adjustment of the electrolyte composition. The Cu doping narrowed the band gap of the SnS thin films, so that it promoted the carrier concentration of the films. The largest carrier concentration increased from 4.26 × 1015 to 436.42 × 1015 cm−3 after the Cu doping. By the additives in the electrolyte, the texture orientation and its coefficient were successfully controlled. The texture of (040) and (200) were obtained by the addition of urea and CTAB, respectively. The carrier mobility of the Cu-doped SnS thin films increased from 0.63 to 1.94 cm2/V s by the (200) texture. With a sample electrodeposition method, we successfully accomplished the combination of the Cu-doping and texture control of SnS thin films. Such a combination decreased the resistivity of the Cu-doped thin film with (200) texture from 322.53 to 24.50 Ω cm, so it was an effective path to improve the electric transmission performance of SnS thin films. Our results provide an easy method and a new view to improve the electric transmission performance of thermoelectric thin films.
Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Materials Science. Materials in Electronics
- Journal Volume
- 30
- Journal Issue
- 17
- Journal Page Range
- p. 15880-15888
- ISSN
- 0957-4522
- CODEN
- JSMEEV
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52024115
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CARRIER MOBILITY; COPPER; DOPED MATERIALS; ELECTRODEPOSITION; TEXTURE; THIN FILMS; TIN SELENIDES; TIN SULFIDES
- Descriptors DEC
- CHALCOGENIDES; DEPOSITION; ELECTROLYSIS; ELEMENTS; FILMS; LYSIS; MATERIALS; METALS; MOBILITY; SELENIDES; SELENIUM COMPOUNDS; SULFIDES; SULFUR COMPOUNDS; SURFACE COATING; TIN COMPOUNDS; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2019 Springer Science+Business Media, LLC, part of Springer Nature