Published October 10, 2012
| Version v1
Journal article
Effect of low constant current stress treatment on the performance of the Cu/ZrO2/Pt resistive switching device
Creators
- 1. School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China)
- 2. Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China)
Description
In this paper, the effect of a low constant current stress (CCS) treatment on the performance of a Cu/ZrO2/Pt resistive switching device is investigated. The conductance of the device increases about two orders of magnitude after CCS treatment, indicating that some defects are introduced into the ZrO2 matrix and the CCS treatment can be regarded as an electrical doping process. Benefiting from these introduced defects, better resistive switching performance is obtained after CCS treatment, including low forming voltage, low reset current, uniform resistive switching and good endurance characteristics. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/0268-1242/27/10/105007Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductor Science and Technology
- Journal Volume
- 27
- Journal Issue
- 10
- Journal Page Range
- [5 p.]
- ISSN
- 0268-1242
- CODEN
- SSTEET
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45014185
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ELECTRIC POTENTIAL; EQUIPMENT; STRESSES; ZIRCONIUM OXIDES
- Descriptors DEC
- CHALCOGENIDES; OXIDES; OXYGEN COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; ZIRCONIUM COMPOUNDS