Published October 10, 2012 | Version v1
Journal article

Effect of low constant current stress treatment on the performance of the Cu/ZrO2/Pt resistive switching device

  • 1. School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China)
  • 2. Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China)

Description

In this paper, the effect of a low constant current stress (CCS) treatment on the performance of a Cu/ZrO2/Pt resistive switching device is investigated. The conductance of the device increases about two orders of magnitude after CCS treatment, indicating that some defects are introduced into the ZrO2 matrix and the CCS treatment can be regarded as an electrical doping process. Benefiting from these introduced defects, better resistive switching performance is obtained after CCS treatment, including low forming voltage, low reset current, uniform resistive switching and good endurance characteristics. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0268-1242/27/10/105007

Additional details

Publishing Information

Journal Title
Semiconductor Science and Technology
Journal Volume
27
Journal Issue
10
Journal Page Range
[5 p.]
ISSN
0268-1242
CODEN
SSTEET

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45014185
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ELECTRIC POTENTIAL; EQUIPMENT; STRESSES; ZIRCONIUM OXIDES
Descriptors DEC
CHALCOGENIDES; OXIDES; OXYGEN COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; ZIRCONIUM COMPOUNDS