Published May 2012
| Version v1
Journal article
Embedded silicon detector to investigate the natural radiative environment
Creators
- 1. Institut d'Electronique du Sud (IES), UMR UM2-CNRS 5214, Pl. E. Bataillon-CC083, 34095 Montpellier Cedex 5 (France)
- 2. Laboratoire d'Informatique, de Robotique et de Microélectronique de Montpellier (LIRMM), UM2-CNRS 161, rue Ada, 34095 Montpellier Cedex 5 (France)
- 3. Institute of Materials, Microelectronics and Nanosciences of Provence (IM2NP), UMR CNRS 6242, Bâtiment IRPHE, 49 rue Joliot Curie, BP 146, 13384 Marseille Cedex 13 (France)
- 4. CNES, 31400 Toulouse (France)
Description
A detector based on a silicon diode was developed to investigate the natural radiative environment. As the detector is embeddable, it has low power consumption and is lightweight and small. The instrument was tested under different neutron beams and used during stratospheric balloon flights. A comparison of the experimental results with Monte Carlo simulation results shows that the embeddable detector is a promising means of investigating the natural radiative environment.
Availability note (English)
Available from http://dx.doi.org/10.1088/1748-0221/7/05/P05007Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Instrumentation
- Journal Volume
- 7
- Journal Issue
- 05
- Journal Page Range
- p. P05007
- ISSN
- 1748-0221
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44051225
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- COMPUTERIZED SIMULATION; MONTE CARLO METHOD; NEUTRON BEAMS; SI SEMICONDUCTOR DETECTORS; SILICON DIODES
- Descriptors DEC
- BEAMS; CALCULATION METHODS; MEASURING INSTRUMENTS; NUCLEON BEAMS; PARTICLE BEAMS; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SIMULATION