Schottky Diode Applications of the Fast Green FCF Organic Material and the Analyze of Solar Cell Characteristics

In this study, a device applications of organic material Fast Green FCF (C₃₇H₃₄N₂Na₂O₁₀S₃Na₂) has been investigated. After chemical cleaning process of boron doped H-Si crystals, Al metal was coated on the one surface of crystals by thermal evaporation and fast green organic materials were coated on other surface of crystals with spin coating method (coating parameters; 800 rpm for 60 s). Finally, Ni metal was coated on Fast Green by sputtering and we obtained the Ni/Fast Green FCF/n-Si/Al Schottky type diode. And then we calculated the basic diode parameters of device with current-voltage ( I-V ) and capacitance- voltage ( C-V ) measurements at the room temperature. We calculated the ideality factory (n), barrier height (Φ_b) of rectifing contact from I-V measurements using thermionic emission methods. Furthermore, we calculated ideality factory (n), barrier height (Φ_b) and series resistance (R_s) of device using Cheung and Norde functions too. The diffusion potential, barrier height, Fermi energy level and donor concentration have been determined from the linear 1/C²-V curves at reverse bias, at room temperature and various frequencies. Besides we measured the current-voltage ( I-V ) at under light and analyzed the characteristics of the solar cell device. (paper)