Published 2010 | Version v1
Miscellaneous Metadata-only

X-Ray Topographic Investigation of Precipitates in HT - HP Treated Si:N

Creators

  • 1. Institute of Electron Technology, Warsaw (Poland)
  • 2. Institute of Electronic Materials Technology, Warsaw (Poland)
  • 3. Institute of Atomic Energy POLATOM, Otwock-Swierk (Poland)
  • 4. University of Athens, Athens (Greece)
  • 5. Institute of Physics, PAS, Warsaw (Poland)
  • 6. State Key Laboratory of Silicon Materials, Hangzhou (China)
  • 7. HASYLAB at DESY, Hamburg (Germany)

Description

no abstract available

Part of:
Annual Report 2009

Additional details

Identifiers

URL
http://iea.cyf.gov.pl/nowa/index.php?option=com_content&view=article&id=65&Itemid=107;

Publishing Information

Imprint Place
Otwock-Swierk (Poland)
Imprint Title
Annual Report 2009
Imprint Pagination
145 p.
Journal Page Range
p. 60
ISSN
2081-6502

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
42023924
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract, Progress Report, Non-conventional Literature
Descriptors DEI
CRYSTAL DEFECTS; CZOCHRALSKI METHOD; DOPED MATERIALS; NITROGEN; PROGRESS REPORT; SAMPLE PREPARATION; SILICON; SYNCHROTRON RADIATION; X-RAY DIFFRACTION
Descriptors DEC
BREMSSTRAHLUNG; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; DIFFRACTION; DOCUMENT TYPES; ELECTROMAGNETIC RADIATION; ELEMENTS; MATERIALS; NONMETALS; RADIATIONS; SCATTERING; SEMIMETALS

Optional Information

Contract/Grant/Project number
HASYLAB Project II-20060165 EC
Notes
2 figs.; This record replaces 41128888