Improvement of the crystallinity of RF-magnetron-sputtered LaAlO3 layers on silicon (100)

Tremendous improvement of the crystallinity of RF-magnetron-sputtered LaAlO3 thin films on silicon (100) has recently been achieved by improving the vacuum prevailing prior to sputtering, particularly during thermal desorption of the artificially formed SiO2, on the surface of silicon. Additionally, the oxygen partial pressure and the substrate temperature during sputtering of these films have been carefully optimized using the appropriate phase diagram. (author)