Improve the open-circuit voltage of ZnO solar cells with inserting ZnS layers by two ways
Creators
- 1. Graduate School of the Chinese Academy of Sciences, Beijing 100049 (China)
- 2. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China)
- 3. Institute of Condensed State Physics, Jilin Normal University, Siping 136000 (China)
Description
ZnS NPs layers were deposited on ZnO NRs by two different ways. One is spin coating; the other is successive ionic layer adsorption and reaction (SILAR) method. The ZnO NRs/ZnS NPs composites were verified by X-ray diffraction, X-ray photoelectron spectroscopy, and UV–visible spectrophotometer; their morphologies and thicknesses were examined by scanning electron microscopic and transmission electron microscopic images. The CdS quantum dot sensitized solar cells (QDSSCs) were constructed using ZnO NRs/ZnS NPs composites as photoanode and their photovoltaic characteristic was studied by J–V curves. The results indicated that the way of SILAR is more beneficial for retarding the back transfer of electrons to CdS and electrolyte than spin coating method. The open-circuit voltage increased to 0.59 V by introducing a ZnS layer through SILAR method. When ZnS NPs layer was deposited for 10 times on ZnO NRs, the conversion efficiency of QDSSC shows ∼3.3 folds increments of as-synthesized ZnO solar cell. - Graphical abstract: When ZnO nanorods were deposited by ZnS for 10 times, the conversion efficiency of QDSSC shows ∼3.3 folds increments of as-synthesized ZnO solar cell. Highlights: ► ZnS layers were deposited with two different ways. ► The way of SILAR is more beneficial for retarding the back transfer of electrons. ► The open-circuit voltage increased to 0.59 V by introducing a ZnS layer through SILAR method
Availability note (English)
Available from http://dx.doi.org/10.1016/j.jssc.2013.02.006Additional details
Identifiers
- DOI
- 10.1016/j.jssc.2013.02.006;
- PII
- S0022-4596(13)00081-9;
Publishing Information
- Journal Title
- Journal of Solid State Chemistry
- Journal Volume
- 200
- Journal Page Range
- p. 258-264
- ISSN
- 0022-4596
- CODEN
- JSSCBI
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46010734
- Subject category
- S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Descriptors DEI
- ADSORPTION; CADMIUM SULFIDES; DEPOSITS; EFFICIENCY; ELECTRIC POTENTIAL; ELECTROLYTES; ELECTRON TRANSFER; ELECTRONS; PHOTOVOLTAIC EFFECT; QUANTUM DOTS; SCANNING ELECTRON MICROSCOPY; SOLAR CELLS; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDES; ZINC SULFIDES
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; COHERENT SCATTERING; DIFFRACTION; DIRECT ENERGY CONVERTERS; ELECTRON MICROSCOPY; ELECTRON SPECTROSCOPY; ELEMENTARY PARTICLES; EQUIPMENT; FERMIONS; INORGANIC PHOSPHORS; LEPTONS; MICROSCOPY; NANOSTRUCTURES; OXIDES; OXYGEN COMPOUNDS; PHOSPHORS; PHOTOELECTRIC CELLS; PHOTOELECTRIC EFFECT; PHOTOELECTRON SPECTROSCOPY; PHOTOVOLTAIC CELLS; SCATTERING; SOLAR EQUIPMENT; SORPTION; SPECTROSCOPY; SULFIDES; SULFUR COMPOUNDS; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.