The radiation hardness of n- and p-Si doped by oxygen and germanium under the irradiation by high-energy nuclear particles

The radiation hardness of n- and p-Si samples grown both by the floating-zone technique and transmutation doped, as well as Si obtained by Czochralski method, were studied after irradiation by fast-pile neutrons of WWR-M reactors under room temperature before and after germanium doped (NGe = 2 · 1020 cm-3). The dependence of the effective concentration of carriers on fluence was described in the framework of Gossick's corrected model. It was found that the introduction of germanium and oxygen enrichment improve the radiation hardness of n-Si in the same way as transmutation doping. The method of increasing of radiation hardness for the semiconductor detectors of nuclear particles was proposed. It was shown that the formation of defect clusters by fast-pile neutrons differs from their formation at irradiation of silicon by 24 GeV protons