Magnetic field and hydrostatic pressure effects on electron Raman scattering in anisotropic quantum dots

Highlights: • Electron Raman scattering process of a two-dimensional anisotropic quantum dot is investigated. • The larger peak intensity will be obtained by controlling the anisotropy degree. • It is possible to control the frequency shift by external probes such as magnetic field and hydrostatic pressure. - Abstract: We have investigated the electron Raman scattering process of a two-dimensional anisotropic quantum dot. With typical semiconducting GaAs based materials, the differential cross-section has been examined on the basis of the computed energies and wave functions. We also studied the effects of external magnetic field and hydrostatic pressure on the Raman scattering in anisotropic quantum dots. The results show that electron Raman scattering in anisotropic QDs is strongly affected by the degree of anisotropy, dot size, applied magnetic field and hydrostatic pressure. It is possible to control the frequency shift and the peak intensity of the Raman spectrum in anisotropic QDs by varying these factors