Published April 2006
| Version v1
Journal article
Optical band gap of ZnO thin films deposited by electron beam evaporation
- 1. Bahauddin Zakariya Univ., Multan (Pakistan). Dept. of Physics
- 2. Pakistan Council of Renewable Energy Tech., Islamabad (Pakistan)
Description
Optical band gap of ZnO thin films deposited by electron beam evaporation at evaporation rates ranging 5 As/sup -1/ to 15 As /sup -1/ and thickness ranging 1000A to 3000A is presented. Deposited films were annealed at 573K for one and half hour. The variations in the optical band gap were observed and showed decreasing behavior from 3.15 eV, 3.05 eV, from 3.18 eV to 3.10 eV and from 3.19 eV to 3.18 eV for films with respective thickness 1000A, 2000 A, 3000 A on increasing the evaporation rate from 5 As/sup-1/ to As/sup -1/ by keeping thickness constant. (author)
Additional details
Publishing Information
- Journal Title
- Journal of Research (Science)
- Journal Volume
- 17
- Journal Issue
- 2
- Journal Page Range
- p. 137-144
- ISSN
- 1021-1012
INIS
- Country of Publication
- Pakistan
- Country of Input or Organization
- Pakistan
- INIS RN
- 38025687
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; DEPOSITION; ELECTRON BEAMS; EVAPORATION; OPTICAL PROPERTIES; PIEZOELECTRICITY; THIN FILMS; ZINC OXIDES
- Descriptors DEC
- BEAMS; CHALCOGENIDES; ELECTRICITY; FILMS; HEAT TREATMENTS; LEPTON BEAMS; OXIDES; OXYGEN COMPOUNDS; PARTICLE BEAMS; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; ZINC COMPOUNDS