Investigation of the influence of electron irradiation on the characteristics of gallium arsenide Schottky diodes

The current-voltage characteristics of Pd--GaAs diodes subjected to bombardment with high-energy electrons were investigated in a wide temperature range (77--400 0K). Electron irradiation reduced the anisotropy of the height of the rectifying barrier of the various crystallographic surfaces of gallium arsenide, indicating that the irradiation affected the surface states at the Pd--GaAs interface. Introduction of deep levels associated with radiation defects altered the mechanism of carrier flow. Resonant tunneling effects could occur in Schottky-barrier diodes made of a material with a low dopant concentration