Published November 3, 2008 | Version v1
Journal article

Decreasing Beam Auto Tuning Interruption Events with In-Situ Chemical Cleaning on Axcelis GSD

  • 1. Infineon Technologies AG., Wernerwerkstr.2, 93049 Regensburg (Germany)
  • 2. ATMI Inc., 7 Commerce Drive, Danbury, CT 06810 (United States)

Description

Ion beam auto tuning time and success rate are often major factors in the utilization and productivity of ion implanters. Tuning software frequently fails to meet specified setup times or recipe parameters, causing production stoppages and requiring manual intervention. Build-up of conductive deposits in the arc chamber and extraction gap can be one of the main causes of auto tuning problems. The deposits cause glitching and ion beam instabilities, which lead to errors in the software optimization routines. Infineon Regensburg has been testing use of XeF2, an in-situ chemical cleaning reagent, with positive results in reducing auto tuning interruption events.

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
1066
Journal Issue
1
Journal Page Range
p. 360-363
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
17. international conference on ion implantation technology
Dates
8-13 Jun 2008
Place
Monterey, CA (United States)

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
41003014
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CLEANING; COMPUTER CODES; DEPOSITS; ETCHING; ION BEAMS; ION IMPLANTATION; ION SOURCES; OPTIMIZATION; PRODUCTIVITY; XENON FLUORIDES
Descriptors DEC
BEAMS; FLUORIDES; FLUORINE COMPOUNDS; HALIDES; HALOGEN COMPOUNDS; RARE GAS COMPOUNDS; SURFACE FINISHING; XENON COMPOUNDS

Optional Information

Notes
(c) 2008 American Institute of Physics