Published November 3, 2008
| Version v1
Journal article
Decreasing Beam Auto Tuning Interruption Events with In-Situ Chemical Cleaning on Axcelis GSD
Creators
- 1. Infineon Technologies AG., Wernerwerkstr.2, 93049 Regensburg (Germany)
- 2. ATMI Inc., 7 Commerce Drive, Danbury, CT 06810 (United States)
Description
Ion beam auto tuning time and success rate are often major factors in the utilization and productivity of ion implanters. Tuning software frequently fails to meet specified setup times or recipe parameters, causing production stoppages and requiring manual intervention. Build-up of conductive deposits in the arc chamber and extraction gap can be one of the main causes of auto tuning problems. The deposits cause glitching and ion beam instabilities, which lead to errors in the software optimization routines. Infineon Regensburg has been testing use of XeF2, an in-situ chemical cleaning reagent, with positive results in reducing auto tuning interruption events.
Additional details
Identifiers
- DOI
- 10.1063/1.3033636;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 1066
- Journal Issue
- 1
- Journal Page Range
- p. 360-363
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- 17. international conference on ion implantation technology
- Dates
- 8-13 Jun 2008
- Place
- Monterey, CA (United States)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41003014
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CLEANING; COMPUTER CODES; DEPOSITS; ETCHING; ION BEAMS; ION IMPLANTATION; ION SOURCES; OPTIMIZATION; PRODUCTIVITY; XENON FLUORIDES
- Descriptors DEC
- BEAMS; FLUORIDES; FLUORINE COMPOUNDS; HALIDES; HALOGEN COMPOUNDS; RARE GAS COMPOUNDS; SURFACE FINISHING; XENON COMPOUNDS
Optional Information
- Notes
- (c) 2008 American Institute of Physics