Published January 1, 2010
| Version v1
Journal article
AC plasma induced modifications in Sb2S3 thin films
- 1. Instituto de Ciencias Fisicas, Universidad Nacional Autonoma de Mexico, Apartado Postal 48-3, 62210, Cuernavaca, Morelos (Mexico)
- 2. Instituto de Ciencias Nucleares, Universidad Nacional Autonoma de Mexico, Apartado Postal 70-543, 04510, Mexico D. F. (Mexico)
- 3. Universidad Autonoma de Nuevo Leon, Facultad de Ciencias Quimicas, Pedro de Alba s/n, Cd. Universitaria, San Nicolas de los Garza, N.L (Mexico)
- 4. Centro de Investigacion en EnergIa, Universidad Nacional Autonoma de Mexico, Privada Xochicalco s/n Col. Centro, Temixco, Morelos, C.P. 62580 (Mexico)
Description
Sb2S3 thin films, deposited by the chemical bath deposition method, were treated with N2 plasma at 3.0 Torr during several minutes. The as-prepared Sb2S3 thin films and films treated with N2 plasma have been characterized using several techniques. X-ray diffraction studies have shown that plasma treatment induced recrystallization on the as-prepared Sb2S3thin films. The band gap values decreased from 2.37 to 1.82 eV after plasma treatment, and the electrical conductivity increased from 109 to 107 (Ωcm)-1 due to the annealing effect.
Availability note (English)
Available from http://dx.doi.org/10.1088/1742-6596/207/1/012019Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 207
- Journal Issue
- 1
- Journal Page Range
- [4 p.]
- ISSN
- 1742-6596
Conference
- Title
- 3. international workshop and summer school on plasma physics 2008
- Dates
- 30 Jun - 5 Jul 2008
- Place
- Kiten (Bulgaria)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42041381
- Subject category
- S36: MATERIALS SCIENCE; S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; ANTIMONY SULFIDES; DEPOSITION; ELECTRIC CONDUCTIVITY; EV RANGE; MODIFICATIONS; PLASMA; RECRYSTALLIZATION; THIN FILMS; X-RAY DIFFRACTION
- Descriptors DEC
- ANTIMONY COMPOUNDS; CHALCOGENIDES; COHERENT SCATTERING; DIFFRACTION; ELECTRICAL PROPERTIES; ENERGY RANGE; FILMS; HEAT TREATMENTS; PHYSICAL PROPERTIES; SCATTERING; SULFIDES; SULFUR COMPOUNDS