Published October 2004
| Version v1
Journal article
Fabrication of an electronic test platform containing nano via holes for molecular devices
Creators
- 1. Dong-A University, Busan (Korea, Republic of)
- 2. Korea Research Institute of Chemical Technology, Daejeon (Korea, Republic of)
- 3. Electronics and Telecommunications Research Institute, Daejeon (Korea, Republic of)
- 4. Korea Research Institute of Standards and Science, Daejeon (Korea, Republic of)
Description
In this paper, a simple device structure is proposed as an electronic test platform for characterizing the electrical properties of molecules. It consists of nano via holes containing active molecules inside. The nano via holes are formed in a background insulating layer sandwiched between bottom and top Ti/Au contacts. The fabrication process is described in detail. The reliability of the device structure and the fabrication process was tested by comparing the I-V characteristics of a self assembled dodecanethiol monolayer in a nano via hole with the published result.
Additional details
Publishing Information
- Journal Title
- Journal of the Korean Physical Society
- Journal Volume
- 45
- Journal Issue
- 4
- Series
- 13 refs, 6 figs
- Journal Page Range
- p. 983-987
- ISSN
- 0374-4884
INIS
- Country of Publication
- Korea, Republic of
- Country of Input or Organization
- Korea, Republic of
- INIS RN
- 42014556
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ATOMIC FORCE MICROSCOPY; ELECTRICAL PROPERTIES; EQUIPMENT; ETCHING; EVAPORATION; FABRICATION; GOLD; MEMBRANE PORES; MOLECULES; NANOSTRUCTURES; SILICON NITRIDES; THIOLS; TITANIUM
- Descriptors DEC
- ELEMENTS; METALS; MICROSCOPY; NITRIDES; NITROGEN COMPOUNDS; ORGANIC COMPOUNDS; ORGANIC SULFUR COMPOUNDS; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; PNICTIDES; SILICON COMPOUNDS; SURFACE FINISHING; TRANSITION ELEMENTS