Optimization of Ge/C ratio for compensation of misfit strain in solid phase epitaxial growth of SiGe layers
- 1. Department of Materials Science and Engineering, University of California, Berkeley, California 94720 (United States)
- 2. Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720 (United States)
- 3. Center for Advanced Materials, Materials Sciences Division, Lawrence Berkeley Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States)
Description
In order to study the strain-compensation effect by C atoms in solid phase epitaxial (SPE) growth of SiGe alloy layers, C sequential implantation was performed in [100] oriented Si substrates with various doses after high dose (5x1016/cm2) Ge implantation. When the nominal peak concentration of implanted C was over 0.55 at. % in the present sample series, misfit dislocation generation in the epitaxial layer was considerably suppressed. A SiGe alloy layer with 0.9 at. % C peak concentration under a 12 at. % Ge peak shows the greatest improved crystallinity compared to layers with smaller C peak concentrations. The experimental results, combined with a simple model calculation, indicate that the optimum Ge/C ratio for strain compensation is between 11 and 22
Additional details
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 63
- Journal Issue
- 19
- Journal Page Range
- p. 2682-2684.
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 25014254
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Descriptors DEI
- BINARY ALLOY SYSTEMS; CARBON IONS; DISLOCATIONS; EPITAXY; GERMANIUM ALLOYS; GERMANIUM IONS; INTERFACES; ION IMPLANTATION; SILICON ALLOYS; STRESS RELAXATION
- Descriptors DEC
- ALLOY SYSTEMS; ALLOYS; CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; IONS; LINE DEFECTS