Stimulation of the electron emission by atomic hydrogen

Capture of 30 eV Ga+ ions by the silicon layer surface during molecular-beam epitaxy was studied. The layers were doped with Ga+ ions by sublimation of the silicon source doped with gallium. The coefficient of the gallium transport from the source into the layer was KΠ=1 and remained constant in the range of TΠ=870-1070 K. The concentration gradient of gallium in the boundary of a lightly doped layer and a heavily one constituted 4-1024 cm-4 during doping with Ga+ ions