Published April 16, 1989
| Version v1
Journal article
Structural changes in solids induced by heavy ions at energies of MeV/n
Description
Postimplantation structural defects induced heavy ions at energies of the order of 42 to 45 MeV/n produced by large accelerators as for example GANIL (France) are investigated. It is demonstrated what kind of information about the structure changes can be obtained by using X-ray diffraction methods, TEM, and HRTEM. Some examples concerning silicon, garnets, and other materials are shown. (author)
Additional details
Additional titles
- Subtitle (English)
- Results of X-ray and electron microscopic studies
Publishing Information
- Journal Title
- Physica Status Solidi A
- Journal Volume
- 112
- Journal Issue
- 2
- Series
- Phys. Status Solidi A.
- Journal Page Range
- 679-688
- ISSN
- 0031-8965
- CODEN
- PSSAB
Conference
- Title
- International conference on ion implantation in semiconductor and other materials.
- Dates
- 12-17 Sep 1988.
- Place
- Lublin (Poland).
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 20073353
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CRYSTAL DEFECTS; ELECTRON MICROSCOPY; FERRITE GARNETS; GEV RANGE 01-10; HEAVY IONS; ION BEAMS; ION IMPLANTATION; LATTICE PARAMETERS; MONOCRYSTALS; PHYSICAL RADIATION EFFECTS; SILICON; SOLIDS; TRANSMISSION; X-RAY DIFFRACTION
- Descriptors DEC
- BEAMS; CHARGED PARTICLES; COHERENT SCATTERING; CRYSTAL STRUCTURE; CRYSTALS; DIFFRACTION; ELEMENTS; ENERGY RANGE; GEV RANGE; IONS; MICROSCOPY; MINERALS; OXIDE MINERALS; RADIATION EFFECTS; SCATTERING; SEMIMETALS