Boosting sensitivity and reliability in field-effect transistor-based biosensors with nanoporous MoS encapsulated by non-planar AlO
- 1. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Kyunggi‐do, 16419 (Korea, Republic of)
Description
Field-effect transistors-based biosensors (bio-FETs) have been considered an important technology for label-free and ultrasensitive point-of-care diagnostics. However, practical applications using bio-FETs are limited due to the trade-off between sensing reliability and sensitivity. This study suggests a reliable and sensitive bio-FETs based on nanoporous molybdenum disulfide (MoS) channels encapsulated by a non-planar high-k aluminum oxide (AlO) dielectric layer. Nanoporous MoS thin film is fabricated with an abundant edge area and periodically ordered nanopores via block copolymer lithography. The ultra-thin AlO dielectric layer deposited along the nanoporous structure of the MoS realizes effective electrostatic control of charged biomolecules over the MoS channel. In addition, it plays important roles in not only enhancing the electrical performance of the nanoporous MoS bio-FETs, that is, mobility, hysteresis, and subthreshold swing, but also achieving effective biomolecular immobilization on the device surface. The nanoporous MoS channel structure surrounded by non-planar AlO detects a prostate cancer biomarker with an ultra-low limit of detection of 1 fg mL. Moreover, the excellent selectivity, high sensitivity, and clinical reliability of the nanoporous MoS bio-FETs are also confirmed. The proposed device platform provides new insights and technical advances in the field of FETs based sensors for future point-of-care devices. (© 2023 Wiley‐VCH GmbH)
Availability note (English)
Available from: http://dx.doi.org/10.1002/adfm.202301919Additional details
Identifiers
Publishing Information
- Journal Title
- Advanced Functional Materials (Internet)
- Journal Volume
- 33
- Journal Issue
- 42
- Journal Page Range
- p. 1-10
- ISSN
- 1616-3028
- CODEN
- AFMDC6
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 54120309
- Subject category
- S36: MATERIALS SCIENCE; S60: APPLIED LIFE SCIENCES;
- Descriptors DEI
- ALUMINIUM OXIDES; ENCAPSULATION; FIELD EFFECT TRANSISTORS; MOLYBDENUM SULFIDES; NANOSTRUCTURES; NEOPLASMS; POROSITY; PROSTATE; RELIABILITY; SENSITIVITY; SENSORS; THIN FILMS
- Descriptors DEC
- ALUMINIUM COMPOUNDS; BODY; CHALCOGENIDES; DISEASES; FILMS; GLANDS; MALE GENITALS; MOLYBDENUM COMPOUNDS; ORGANS; OXIDES; OXYGEN COMPOUNDS; REFRACTORY METAL COMPOUNDS; SEMICONDUCTOR DEVICES; SULFIDES; SULFUR COMPOUNDS; TRANSISTORS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- AID: 2301919