Published 1978
| Version v1
Journal article
The variation of silicon characteristic with radiation damage effects
Description
For a long life photovoltaic cell the degradation of the device characteristics with 1 MeV electron radiation must be known so as to be able to predict the life of the cell. Hence, a study was made of radiation damage effects on the bulk properties of the silicon crystal, such as conductivity, Hall effect, carrier life time and carrier mobility. From the results of the data, it is concluded that there appeared to be a steady state damage level reached in P type material. (author)
Additional details
Publishing Information
- Journal Title
- J. Korea Inst. Electron. Eng.
- Journal Volume
- 15
- Journal Issue
- 4
- Series
- J. Korea Inst. Electron. Eng.
- Journal Page Range
- 26-32
INIS
- Country of Publication
- Korea, Republic of
- Country of Input or Organization
- Korea, Republic of
- INIS RN
- 11540816
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CARRIER DENSITY; CARRIER LIFETIME; ELECTRIC CONDUCTIVITY; ELECTRON BEAMS; ELECTRON MOBILITY; HALL EFFECT; HOLE MOBILITY; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; SILICON; VAN DE GRAAFF ACCELERATORS
- Descriptors DEC
- ACCELERATORS; BEAMS; ELECTRICAL PROPERTIES; ELECTROSTATIC ACCELERATORS; ELEMENTS; LEPTON BEAMS; LIFETIME; MOBILITY; PARTICLE BEAMS; PARTICLE MOBILITY; PHYSICAL PROPERTIES; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SEMIMETALS