Exposition of Y-Ba-Cu-O-Films by MO-CVD using a novel barium precursor

Y-Ba-Cu-oxides are deposited by MOCVD in a hot-wall reactor using the well known copper-and yttrium β-diketonate precursors, Cu(thd)2 and Y(thd)3, and the novel barium precursor, Ba(hfa)2 tetraglyme. This novel barium precursor is thermally stable, non-hygroscopic and highly volatile. Depositions are performed on single-crystalline (100)-oriented MgO substrates. Depositions performed at 8000C and 9000C show smooth c-axis-oriented YBa2Cu3O7-δ layers, with CuO precipitates. At 9000C also Y2BaCuO5 and barium oxide crystals are present. 13 refs., 5 figs., 3 tabs