Electronic properties of ZnWO4 based on ab initio FP-LAPW band-structure calculations and X-ray spectroscopy data
- 1. Frantsevych Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, 3 Krzhyzhanivsky Street, Kyiv UA-03142 (Ukraine)
- 2. Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation)
- 3. Nikolaev Institute of Inorganic Chemistry, SB RAS, Novosibirsk 630090 (Russian Federation)
Description
Total and partial densities of states of the atoms constituting zinc tungstate, ZnWO4, have been calculated using the ab initio full potential linearized augmented plane wave (FP-LAPW) method. The theoretical data reveal that main contributors in the valence band of ZnWO4 are the Zn 3d-, W 5d- and O 2p-like states: the Zn 3d- and W 5d-like states contribute mainly at the bottom, whilst the O 2p-like states at the top of the valence band, with also significant portions of contributions of the above states throughout the whole valence-band region of the tungstate under study. In addition, data of our band-structure FP-LAPW calculations indicate that the conduction band of ZnWO4 is dominated by contributions of the W 5d-like states. To verify the theoretical findings, high-quality inclusion-free ZnWO4 single crystals were specially grown along the [010] direction for the present experimental studies employing the low thermal gradient Czochralski technique. It has been established that, comparison on a common energy scale of the X-ray photoelectron valence-band spectrum and the X-ray emission bands representing the energy distribution of mainly the Zn 3d-, W 5d- and O 2p-like states of ZnWO4 confirm experimentally the present FP-LAPW theoretical data regarding the occupations of the valence band of zinc tungstate. - Graphical abstract: Display Omitted - Highlights: • Total and partial densities of states of the atoms constituting ZnWO4 are calculated. • Zn 3d and W 5d states are dominant contributors at the bottom of the valence band. • Contributions of O 2p states dominate at the top of the valence band. • Bottom of the conduction band is dominated by contributions of W 5d* states. • The theoretical results are confirmed experimentally by X-ray spectroscopy data
Availability note (English)
Available from http://dx.doi.org/10.1016/j.matchemphys.2013.04.010Additional details
Identifiers
- DOI
- 10.1016/j.matchemphys.2013.04.010;
- PII
- S0254-0584(13)00319-2;
Publishing Information
- Journal Title
- Materials Chemistry and Physics
- Journal Volume
- 140
- Journal Issue
- 2-3
- Journal Page Range
- p. 588-595
- ISSN
- 0254-0584
- CODEN
- MCHPDR
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45108793
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- DENSITY; ELECTRONIC STRUCTURE; MONOCRYSTALS; OXIDES; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTOR MATERIALS; TEMPERATURE GRADIENTS; THEORETICAL DATA; X-RAY SPECTROSCOPY; ZINC; ZINC TUNGSTATES
- Descriptors DEC
- CHALCOGENIDES; CRYSTALS; DATA; ELECTRON SPECTROSCOPY; ELEMENTS; INFORMATION; MATERIALS; METALS; NUMERICAL DATA; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; REFRACTORY METAL COMPOUNDS; SPECTROSCOPY; TRANSITION ELEMENT COMPOUNDS; TUNGSTATES; TUNGSTEN COMPOUNDS; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.