Picosecond laser structuration under high pressures: Observation of boron nitride nanorods
Creators
- 1. Laboratoire de Physique des Lasers-LPL CNRS, Institut Galilee, Universite Paris 13, 93430 Villetaneuse (France)
- 2. Laboratoire d'Ingenierie des Materiaux et des Hautes Pressions-LIMHP CNRS, Institut Galilee, Universite Paris 13, 93430 Villetaneuse (France)
- 3. Laboratoire des Proprietes Mecaniques et Thermodynamiques des Materiaux-LPMTM CNRS, Institut Galilee, Universite Paris 13, 93430 Villetaneuse (France)
- 4. Centre Interdisciplinaire de Nanoscience de Marseille-CINaM, UPR CNRS 3118, Faculte des Science de Luminy, 13288 Marseille (France)
- 5. Institute of Electronic Structure and Laser, Foundation for Research and Technology-Hellas (IESL-FORTH), 71110 Heraklion, Crete (Greece)
- 6. Department of Physics, University of Crete, Heraklion, Crete (Greece)
Description
We report on picosecond UV-laser processing of hexagonal boron nitride (BN) at moderately high pressures above 500 bar. The main effect is specific to the ambient gas and laser pulse duration in the ablation regime: when samples are irradiated by 5 or 0.45 ps laser pulses in nitrogen gas environment, multiple nucleation of a new crystalline product-BN nanorods-takes place. This process is triggered on structural defects, which number density strongly decreases upon recrystallization. Nonlinear photon absorption by adsorbed nitrogen molecules is suggested to mediate the nucleation growth. High pressure is responsible for the confinement and strong backscattering of ablation products. A strong surface structuring also appears at longer 150 ps laser irradiation in similar experimental conditions. However, the transformed product in this case is amorphous strongly contaminated by boron suboxides BxOy
Additional details
Identifiers
- DOI
- 10.1063/1.3000457;
- arXiv
- arXiv:0811.2500v1;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 104
- Journal Issue
- 9
- Journal Page Range
- p. 093504-093504.9
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40059500
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ABLATION; ABSORPTION; AMORPHOUS STATE; BACKSCATTERING; BORON NITRIDES; BORON OXIDES; CRYSTAL GROWTH; IRRADIATION; LASER RADIATION; LAYERS; NANOSTRUCTURES; NITROGEN; NONLINEAR OPTICS; NUCLEATION; PHOTONS; PRESSURE RANGE MEGA PA 10-100; PULSES; RECRYSTALLIZATION; SEMICONDUCTOR LASERS; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- BORON COMPOUNDS; BOSONS; CHALCOGENIDES; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; ELEMENTS; LASERS; MASSLESS PARTICLES; MATERIALS; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; OPTICS; OXIDES; OXYGEN COMPOUNDS; PNICTIDES; PRESSURE RANGE; PRESSURE RANGE MEGA PA; RADIATIONS; SCATTERING; SEMICONDUCTOR DEVICES; SOLID STATE LASERS; SORPTION
Optional Information
- Notes
- (c) 2008 American Institute of Physics