Microstructural effect on the low temperature transport properties of Ce–Al (Ga) metallic glasses
- 1. Department of Physics, Nano–Science Unit, Banaras Hindu University, Varanasi 221005 (India)
- 2. Department of Physics, Panjab University, Chandigarh 160014 (India)
Description
The substitution of Ga in Ce75Al25−xGax (x = 0 and 4 at.%) metallic glasses (MGs) has led to phase separation giving rise to nano-amorphous domains in a glassy matrix. The CeL3-edge XAS spectra for x = 4 has shown appearance of 4f0 delocalized states. The temperature coefficient of resistance (TCR) becomes higher with addition of Ga. The magnetic field tuned magnetoresistance (MR) transition from positive to negative values has been observed for the first time with Ga substitution. These changes in the transport properties have been discussed in terms of formation of nano-amorphous domains and its link with 4f electrons for Ce atoms. - Graphical abstract: In the present work, the effect of microstructural variation on the low temperature transport properties of Ce75Al25−xGax (x = 0 and 4 at.%) metallic glasses (MGs) have been investigated. The substitution of Ga has led to phase separation giving rise to nano-amorphous domains in a glassy matrix. It was suggested that the presence of two types of density clusters in the alloy with x = 4 may result in the formation of nano-amorphous domains with different short range ordering. The magnetic field tuned MR transition from positive to negative values at about 2.45 T has been observed for the first time with Ga substitution. The changes in the transport properties due to Ga substitution have been discussed in terms of formation of nano-amorphous domains and its link with 4f electrons for Ce atoms. This work, therefore, opens up new direction of investigation of 4f electron behaviors and its correlation with the microstructure and transport properties in Ce–Al(Ga) metallic glasses. It is expected that this study can provide some insights to understand the correlation between the microstructure and the transport behavior of Ce–Al (Ga) MGs.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.scriptamat.2016.03.007Additional details
Identifiers
- DOI
- 10.1016/j.scriptamat.2016.03.007;
- PII
- S1359-6462(16)30083-5;
Publishing Information
- Journal Title
- Scripta Materialia
- Journal Volume
- 118
- Journal Page Range
- p. 24-28
- ISSN
- 1359-6462
- CODEN
- SCMAF7
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48012769
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ABSORPTION SPECTROSCOPY; ALUMINIUM ALLOYS; AMORPHOUS STATE; CERIUM BASE ALLOYS; CONCENTRATION RATIO; CORRELATIONS; DOMAIN STRUCTURE; GALLIUM ALLOYS; MAGNETIC FIELDS; MAGNETIC PROPERTIES; MAGNETORESISTANCE; METALLIC GLASSES; MICROSTRUCTURE; TEMPERATURE COEFFICIENT; X-RAY SPECTROSCOPY
- Descriptors DEC
- ALLOYS; CERIUM ALLOYS; DIMENSIONLESS NUMBERS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; PHYSICAL PROPERTIES; RARE EARTH ALLOYS; REACTIVITY COEFFICIENTS; SPECTROSCOPY
Optional Information
- Copyright
- Copyright (c) 2016 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.