Published 2001
| Version v1
Report
Catalytic plasma anodising of silicon on the surface with radiation defects
Description
In this report, we present results in examination of the effect of ion implantation of the silicon surface and the kinetics of formation of the oxide layer of silicon in low-temperature catalytic plasma oxidation and the parameters of the MDS structures
Availability note (English)
Available from British Library Document Supply Centre- DSC:9023.190(10293)TAdditional details
Publishing Information
- Imprint Pagination
- 3 p.
- Report number
- VR-Trans--10293
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 32069588
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Translation, Non-conventional Literature
- Descriptors DEI
- ION IMPLANTATION; LAYERS; OXIDATION; PHYSICAL RADIATION EFFECTS; PLASMA; SILICON; SURFACE AREA
- Descriptors DEC
- CHEMICAL REACTIONS; ELEMENTS; RADIATION EFFECTS; SEMIMETALS; SURFACE PROPERTIES
Optional Information
- Notes
- Translated from Russian (Fiz. Khim. Orab. Mater. 1999 (2) p. 50-52)