Published September 2010
| Version v1
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Dynamics of porous silicon oxidation induced by singlet oxygen
- 1. Moscow State Univ., Faculty of physics, 1(2), Leninskie Gory, Moscow (Russian Federation)
- 2. Moscow State Univ., Faculty of material sciences, 1, Leninskie Gory, Moscow (Russian Federation)
Description
no abstract available
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Additional details
Publishing Information
- Imprint Place
- Chisinau (Moldova, Republic of)
- Imprint Title
- 5. International conference on materials science and condensed matter physics and symposium 'Electrical methods of materials treatment'. Abstracts
- Imprint Pagination
- 340 p.
- Journal Page Range
- p. 183
- Report number
- INIS-MD--006
Conference
- Title
- 5. international conference on materials science and condensed matter physics; symposium on electrical methods of materials treatment
- Dates
- 13-17 Sep 2010
- Place
- Chisinau (Moldova, Republic of)
INIS
- Country of Publication
- Moldova, Republic of
- Country of Input or Organization
- Moldova, Republic of
- INIS RN
- 42081843
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- CRYSTALS; NANOSTRUCTURES; OXYGEN; PHOTOLUMINESCENCE; POROUS MATERIALS; SILICON; TEMPERATURE RANGE 0065-0273 K; X-RAY DIFFRACTION
- Descriptors DEC
- COHERENT SCATTERING; DIFFRACTION; ELEMENTS; EMISSION; LUMINESCENCE; MATERIALS; NONMETALS; PHOTON EMISSION; SCATTERING; SEMIMETALS; TEMPERATURE RANGE
Optional Information
- Notes
- 1 fig.