Studies of lithium-ion distribution in silicon using a secondary ion-ion emission method

The distribution of lithium introduced into silicon depending on the annealing temperature is studied. The lithium distribution profiles at a temperature over 2000C are different from that in the original specimen. The profile change is different for profile regions to the left and to the right from the distribution maximum. The asymmetry of the distribution profile change in the annealing is attributed to different mechanisms of diffusion to and from the specimen surface relative to distribution maximum. (author)