Published June 2011
| Version v1
Journal article
Matrices of 960-nm vertical-cavity surface-emitting lasers
Creators
- 1. Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)
- 2. Connector Optics LLC (Russian Federation)
- 3. Minsk Research Institute of Radiomaterials (Belarus)
- 4. LETI St. Petersburg State Electrotechnical University (Russian Federation)
- 5. Russian Academy of Sciences, Nanotechnology Research and Education Center, St. Petersburg Academic University (Russian Federation)
- 6. VI Systems GmbH (Germany)
- 7. OES Ltd (Russian Federation)
Description
Matrices of vertical-cavity surface-emitting lasers with individual addressing of elements and radiation output through a gallium arsenide substrate are implemented. Individual laser emitters with a current aperture diameter of 6–7 μm exhibit continuous-wave room-temperature lasing at a wavelength of 958–962 nm with threshold currents of 1.1–1.3 mA, differential efficiency of 0.5–0.8 mW/mA, and a maximum output power of 7.5–9 mW. The parameter variation of individual emitters within a matrix chip containing 5 × 7 elements does not exceed ±20%.
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 45
- Journal Issue
- 6
- Journal Page Range
- p. 818-821
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43094891
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- EFFICIENCY; GALLIUM ARSENIDES; LASERS; SUBSTRATES; SURFACES; THRESHOLD CURRENT
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CURRENTS; ELECTRIC CURRENTS; GALLIUM COMPOUNDS; PNICTIDES
Optional Information
- Copyright
- Copyright (c) 2011 Pleiades Publishing, Ltd.