Published 1973
| Version v1
Journal article
Study of defects produced in GaAs by the implantation of Zn+ ions (1MeV) using channeling
Creators
- 1. Centre National d'Etudes des Telecommunications (CNET), Centre de Recherches de Lannion, 22 (France)
Description
no abstract available
Additional details
Additional titles
- Original title (French)
- Etude par canalisation des defauts crees dans GaAs par l'implantation de Zn
Publishing Information
- Journal Title
- J. Phys. (Paris), Colloq.
- Journal Issue
- no.5
- Series
- J. Phys. (Paris), Colloq.
Conference
- Title
- Centenary Congress of the French Physical Society.
- Dates
- 28 May 1973.
- Place
- Vittel, France.
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 5140035
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ARSENIDES; CRYSTAL DEFECTS; GALLIUM COMPOUNDS; ION BEAMS; ION IMPLANTATION; MEV RANGE 01-10; PHYSICAL RADIATION EFFECTS; ZINC IONS
- Descriptors DEC
- ARSENIC COMPOUNDS; BEAMS; CHARGED PARTICLES; CRYSTAL STRUCTURE; ENERGY RANGE; IONS; MEV RANGE; RADIATION EFFECTS