Published July 2018 | Version v1
Journal article

The Effect of Bismuth on the Structural Perfection and the Luminescent Properties of Thin-Film Elastically Stressed AlxInyGa1–xyBizSb1–z/GaSb Heterostructures

  • 1. Russian Academy of Sciences, Southern Scientific Center (Russian Federation)
  • 2. Platov State Polytechnic University (Russian Federation)

Description

The effect of bismuth on the structural perfection and the luminescent properties of AlxInyGa1–xyBizSb1–z/GaSb heterostructures has been studied. The optimal parameters of the process of zone recrystallization with temperature gradient at which epitaxial AlInGaBiSb layers have the minimum roughness and high structural perfection have been revealed: temperature gradient 1 ≤ G ≤ 30 K/cm, the liquid zone thickness 60 ≤ l ≤ 100 μm, the temperature range 773 K ≤ T ≤ 873 K, and bismuth concentration 0.3–0.4 mol fraction.

Additional details

Identifiers

Publishing Information

Journal Title
Physics of the Solid State
Journal Volume
60
Journal Issue
7
Journal Page Range
p. 1280-1286
ISSN
1063-7834

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Copyright (c) 2018 Pleiades Publishing, Ltd.