Published 1996 | Version v1
Book Metadata-only

FT-IR study of silicon oxide synthesis by ion-implantation

Creators

  • 1. Department of Physics, Bombay University, Mumbai (India)
  • 2. Regional Sophisticated Instrumentation Centre, Indian Institute of Technology, Mumbai (India)

Description

This paper describes the Fourier Transform Infrared (FTIR) investigation of the SiO2 layer formation by oxygen ion-implantation

Part of:
Proceedings of the DAE solid state physics symposium. V. 39C

Additional details

Publishing Information

Publisher
Department of Atomic Energy.
Imprint Place
Mumbai (India)
Imprint Title
Proceedings of the DAE solid state physics symposium. V. 39C
Imprint Pagination
497 p.
Journal Page Range
p. 171.

Conference

Title
39. DAE solid state physics symposium.
Dates
27-31 Dec 1996.
Place
Mumbai (India).

INIS

Country of Publication
India
Country of Input or Organization
India
INIS RN
29012781
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANNEALING; CHEMICAL BONDS; FOURIER TRANSFORMATION; INFRARED SPECTRA; ION IMPLANTATION; OXYGEN IONS; PEAKS; SILICON OXIDES; STRAINS
Descriptors DEC
CHALCOGENIDES; CHARGED PARTICLES; HEAT TREATMENTS; INTEGRAL TRANSFORMATIONS; IONS; OXIDES; OXYGEN COMPOUNDS; SILICON COMPOUNDS; SPECTRA; TRANSFORMATIONS

Optional Information

Notes
3 refs., 1 fig.