Published December 2011 | Version v1
Journal article

Double magnetron self-sputtering in HiPIMS discharges

  • 1. Department 'Science and Analysis of Materials' (SAM), Centre de Recherche Public-Gabriel Lippmann, 41 rue du Brill, L-4422 Belvaux (Luxembourg)

Description

There is an increasing concern that high power impulse magnetron sputtering (HiPIMS) systems are being disadvantaged by relatively low deposition rates compared with traditional dc magnetrons operating at the same average power input. Nevertheless, a minimization of the losses of ionized and neutral species is possible in HiPIMS discharges. In the described magnetron configuration, the majority of metal ions escaping the discharge volume can be either used for deposition or, if they fail to reach the substrate, for discharge maintenance when charge redistribution from one ionization area to the other takes place. The anode-to-cathode configuration allows the neutrals, which are not deposited on the substrate, to be guided to the other instantaneous cathode and be ionized or re-sputtered. For the same average power input, it becomes possible to increase the self-sputtering efficiency, deposition rate and obtain a versatile control over the film microstructure.

Availability note (English)

Available from http://dx.doi.org/10.1088/0963-0252/20/6/065008

Additional details

Identifiers

DOI
10.1088/0963-0252/20/6/065008;
PII
S0963-0252(11)00032-6;

Publishing Information

Journal Title
Plasma Sources Science and Technology
Journal Volume
20
Journal Issue
6
Journal Page Range
[9 p.]
ISSN
0963-0252

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44004571
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
DEPOSITION; MAGNETRONS; SPUTTERING; THIN FILMS
Descriptors DEC
ELECTRON TUBES; ELECTRONIC EQUIPMENT; EQUIPMENT; FILMS; MICROWAVE EQUIPMENT; MICROWAVE TUBES