Double magnetron self-sputtering in HiPIMS discharges
Creators
- 1. Department 'Science and Analysis of Materials' (SAM), Centre de Recherche Public-Gabriel Lippmann, 41 rue du Brill, L-4422 Belvaux (Luxembourg)
Description
There is an increasing concern that high power impulse magnetron sputtering (HiPIMS) systems are being disadvantaged by relatively low deposition rates compared with traditional dc magnetrons operating at the same average power input. Nevertheless, a minimization of the losses of ionized and neutral species is possible in HiPIMS discharges. In the described magnetron configuration, the majority of metal ions escaping the discharge volume can be either used for deposition or, if they fail to reach the substrate, for discharge maintenance when charge redistribution from one ionization area to the other takes place. The anode-to-cathode configuration allows the neutrals, which are not deposited on the substrate, to be guided to the other instantaneous cathode and be ionized or re-sputtered. For the same average power input, it becomes possible to increase the self-sputtering efficiency, deposition rate and obtain a versatile control over the film microstructure.
Availability note (English)
Available from http://dx.doi.org/10.1088/0963-0252/20/6/065008Additional details
Identifiers
- DOI
- 10.1088/0963-0252/20/6/065008;
- PII
- S0963-0252(11)00032-6;
Publishing Information
- Journal Title
- Plasma Sources Science and Technology
- Journal Volume
- 20
- Journal Issue
- 6
- Journal Page Range
- [9 p.]
- ISSN
- 0963-0252
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44004571
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- DEPOSITION; MAGNETRONS; SPUTTERING; THIN FILMS
- Descriptors DEC
- ELECTRON TUBES; ELECTRONIC EQUIPMENT; EQUIPMENT; FILMS; MICROWAVE EQUIPMENT; MICROWAVE TUBES