Published 1990 | Version v1
Journal article Metadata-only

Impurity states in uniaxially compressed degenerate band semiconductors

Creators

  • 1. AN Ukrainskoj SSR, Kiev (Ukrainian SSR). Inst. Poluprovodnikov

Description

Features of energy spectrum of point defects in semiconductors with degenerated band structure (p-type materials, gapless semiconductors) under an uniaxial compression which eliminates band degeneration are considered. In p-type materials the transformation of the both local acceptor states into the resonance ones takes place with the deformation growth, with the lower state being sufficiently narrow

Additional details

Additional titles

Original title (Russian)
Примесные состояния в одноосно сжатых полупроводниках с вырожденными зонами

Publishing Information

Journal Title
Fizika Tverdogo Tela
Journal Volume
32
Journal Issue
1
Series
Fiz. Tverd. Tela.
Journal Page Range
86-93
ISSN
0367-3294
CODEN
FTVTA

INIS

Country of Publication
Russian Federation
Country of Input or Organization
USSR
INIS RN
22057229
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CADMIUM TELLURIDES; DEFORMATION; ELECTRON DENSITY; ENERGY LEVELS; GREEN FUNCTION; HAMILTONIANS; MERCURY TELLURIDES; P-TYPE CONDUCTORS; POINT DEFECTS; SOLID SOLUTIONS
Descriptors DEC
CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DISPERSIONS; FUNCTIONS; HOMOGENEOUS MIXTURES; MATERIALS; MATHEMATICAL OPERATORS; MERCURY COMPOUNDS; MIXTURES; QUANTUM OPERATORS; SEMICONDUCTOR MATERIALS; SOLUTIONS; TELLURIDES; TELLURIUM COMPOUNDS