Published April 2005
| Version v1
Journal article
Low-frequency noise in submicron GaAs/Al x Ga1-x As Hall devices
- 1. Center for Materials Research and Technology (MARTECH), Florida State University, Tallahassee, FL 32306-4351 (United States)
- 2. Laboratory for Electronics Intelligent Systems, Research Institute of Electrical Communication, Tohoku University, Sendai (Japan)
Description
We present systematic studies of the excess low-frequency noise in GaAs/Al x Ga1-x As heterostructure 2DES Hall devices. We studied structures of various sizes made from different wafer materials. In larger samples a significant suppression of the 1/f noise level by gating has been observed. In structures as small as (0.45x0.45) μm2 the overall noise level is significantly higher and non-Gaussian-type noise dominates at all temperatures. Random telegraph fluctuations finally limit the device miniaturization in these materials
Additional details
Identifiers
- DOI
- 10.1016/j.jmmm.2004.11.502;
- PII
- S0304-8853(04)01747-0;
Publishing Information
- Journal Title
- Journal of Magnetism and Magnetic Materials
- Journal Volume
- 290-291
- Journal Page Range
- p. 1161-1164
- ISSN
- 0304-8853
- CODEN
- JMMMDC
Conference
- Title
- Joint European magnetic symposia
- Acronym
- JEMS '04
- Dates
- 5-10 Sep 2004
- Place
- Dresden (Germany)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37024903
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM COMPOUNDS; FLUCTUATIONS; GALLIUM ARSENIDES; HALL EFFECT; INHIBITION; MINIATURIZATION; NOISE; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; GALLIUM COMPOUNDS; MATERIALS; PNICTIDES; VARIATIONS
Optional Information
- Copyright
- Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.