Published February 11, 1991 | Version v1
Journal article Metadata-only

Cross-sectional transmission electron microscopy observation of Nb/AlOx-Al/Nb Josephson junctions

Creators

  • 1. Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan (Japan)

Description

A study of microstructure of Nb/AlOx-Al/Nb Josephson junctions by cross-sectional transmission electron microscopy yielded much information regarding the junction barrier region. Both thick Nb and several-nanometer Al form polycrystalline films with columnar structures. Nb is oriented to the (110) plane, and Al is (111). The 200 nm lower Nb has a wavy surface with ∼5 nm smoothness, but its surface is planarized by several nanometers Al deposited on it. Thus AlOx with a smoothness under 1 nm can be formed on Al. The upper Nb has a good crystalline structure even just above the AlOx barrier

Additional details

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
58
Journal Issue
6
Series
Appl. Phys. Lett.
Journal Page Range
645-647
ISSN
0003-6951
CODEN
APPLA

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
22053735
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
Descriptors DEI
ALUMINIUM OXIDES; JOSEPHSON EFFECT; JOSEPHSON JUNCTIONS; MICROSTRUCTURE; NIOBIUM; TRANSMISSION ELECTRON MICROSCO
Descriptors DEC
ALUMINIUM COMPOUNDS; CHALCOGENIDES; CRYSTAL STRUCTURE; ELECTRON MICROSCOPY; ELEMENTS; METALS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; SEMICONDUCTOR JUNCTIONS; TRANSITION ELEMENTS