Published June 15, 2004
| Version v1
Journal article
Dielectric anomalies in the TGS ferroelectric below the critical temperature after exposure to a transverse electric field
Creators
Description
The complex permittivity of a TGS crystal, previously exposed to a prolonged constant electric field perpendicular to the ferroelectric axis, has been measured in the temperature region from 85 to 355 K, at frequencies of 10-1-105 Hz. The results have been compared with the analogous data obtained for the crystal annealed in the paraelectric phase. It has been found that the transverse electric field permanently suppresses the complex permittivity signal between 200 K and the critical temperature 322.2 K
Additional details
Identifiers
- DOI
- 10.1016/j.physb.2004.04.045;
- PII
- S0921452604006349;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 349
- Journal Issue
- 1-4
- Journal Page Range
- p. 333-336
- ISSN
- 0921-4526
- CODEN
- PHYBE3
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36051601
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; CRITICAL TEMPERATURE; CRYSTALS; DIELECTRIC MATERIALS; ELECTRIC FIELDS; FREQUENCY DEPENDENCE; GADOLINIUM COMPOUNDS; PERMITTIVITY; SILICATES; TEMPERATURE DEPENDENCE; TERBIUM COMPOUNDS
- Descriptors DEC
- DIELECTRIC PROPERTIES; ELECTRICAL PROPERTIES; HEAT TREATMENTS; MATERIALS; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RARE EARTH COMPOUNDS; SILICON COMPOUNDS; THERMODYNAMIC PROPERTIES; TRANSITION TEMPERATURE
Optional Information
- Copyright
- Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.