Fabrication of high-performance ordered radial junction silicon nanopencil solar cells by fine-tuning surface carrier recombination and structure morphology
Creators
- 1. Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan)
- 2. International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044 (Japan)
- 3. International Center for Young Scientist, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044 (Japan)
- 4. Oji Holdings Corporation, Chuo, Tokyo 104-0061 (Japan)
Description
Highlights: • Silicon nanopencils (SiNPs) were fabricated by colloidal lithography and ICP-RIE process. • The control of SiNPs morphology increased the effective junction areas. • Optimized SiNPs solar cell device obtain a 14.3% efficiency. -- Abstract: A high-efficiency (14.3%) solar cell using silicon nanopencils (SiNPs) was achieved by controlling surface carrier recombination and nanostructure morphology. Radial p-n junction nanopencils have several advantageous features that derive from their asymmetric structure, which enables excellent broad-band absorption and light trapping. The surface carrier recombination problem caused by plasma etching was solved using a chemical polish etching (CPE) method. The control of CPE treatment and SiNP morphology can reduce the surface recombination and increases the effective junction area. And bulk recombination was minimized by reducing the wafer thickness. These techniques have the potential to achieve low-cost and high-efficiency photovoltaic cells.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.nanoen.2018.12.002Additional details
Identifiers
- DOI
- 10.1016/j.nanoen.2018.12.002;
- PII
- S2211285518309066;
Publishing Information
- Journal Title
- Nano Energy (Print)
- Journal Volume
- 56
- Journal Page Range
- p. 604-611
- ISSN
- 2211-2855
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 54126509
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- ABSORPTION; ASYMMETRY; ELECTRIC CONTACTS; MORPHOLOGY; NANOSTRUCTURES; PERFORMANCE; PHOTOVOLTAIC EFFECT; PLASMA; P-N JUNCTIONS; RECOMBINATION; SILICON; SILICON SOLAR CELLS; SURFACES; THICKNESS
- Descriptors DEC
- DIMENSIONS; DIRECT ENERGY CONVERTERS; ELECTRICAL EQUIPMENT; ELEMENTS; EQUIPMENT; PHOTOELECTRIC CELLS; PHOTOELECTRIC EFFECT; PHOTOVOLTAIC CELLS; SEMICONDUCTOR JUNCTIONS; SEMIMETALS; SOLAR CELLS; SOLAR EQUIPMENT; SORPTION
Optional Information
- Copyright
- Copyright (c) 2018 Published by Elsevier Ltd.