Published 1975
| Version v1
Book
Spatial distribution and annealing of defects resulting from boron implantation in Si
- 1. Centre National de la Recherche Scientifique, 67 - Strasbourg (France). Centre de Recherches Nucleaires
- 2. Max-Planck-Institut fuer Kernphysik, Heidelberg (F.R. Germany)
- 3. Kernforschungszentrum Karlsruhe (F.R. Germany). Inst. fuer Angewandte Kernphysik
Description
The defect distribution resulting from room temperature bombardement of silicon by low energy boron ions (8-100keV) is investigated by backscattering of 4He+ ions and channeling techniques. Contrarily to the general accepted statement the profiles of the defects and of the boron ion are nearly identical. Annealed samples show a reverse annealing stage between 600 and 800 deg C, certainly related to the formation of rod like defects
Abstract (French)
On a etudie par canalisation et retrodiffusion d'ions 4He+, le profil de creation des defauts consecutifs a une implantation de bore dans le silicium. Pour obtenir ces distributions, il est necessaire de separer les retrodiffusions directes sur les atomes deplaces, du fond du a la decanalisation sur ces centres. Contrairement aux previsions de ces derniers, on trouve que les ions et les defauts ont sensiblement le meme profil. Les spectres de retrodiffusion sur ces echantillons, recuits a differentes temperatures, montrent, entre 600 et 800 deg C, un effet de guerison negative (reverse annealing) qui semble etre lie a la presence de defauts en batonnets (rod-like defects)Additional details
Additional titles
- Original title (French)
- Distribution spatiale et guerison des defauts crees par implantation de bore dans le silicium
Publishing Information
- Publisher
- Institut National des Sciences et Techniques Nucleaires.
- Imprint Place
- Saclay, France
- Imprint Title
- Meeting on particle channeling. Description and applications. Saclay, 27-31 May 1974
- Imprint Pagination
- p. 381-396.
Conference
- Title
- Meeting on particle channeling.
- Dates
- 27 May 1974.
- Place
- Saclay, France.
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 6216162
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; BORON IONS; CRYSTAL DEFECTS; ION BEAMS; ION IMPLANTATION; SILICON; SPATIAL DISTRIBUTION
- Descriptors DEC
- ATOMIC IONS; BEAMS; CHARGED PARTICLES; CRYSTAL STRUCTURE; DISTRIBUTION; ELEMENTS; HEAT TREATMENTS; IONS; SEMIMETALS
Optional Information
- Notes
- Imprint:Session d'etudes sur la canalisation des particules. Description et applications. Saclay, 27-31 mai 1974.