Published March 15, 2004
| Version v1
Journal article
Oriented AlN films prepared with solid AlCl3 source by bias assisted Cat-CVD
Description
In this paper, aluminum nitride (AlN) films have been successfully synthesized by taking solid AlCl3 as the source of atomic aluminum, with negative bias assisted catalytic chemical vapor deposition (Cat-CVD) on Si(1 0 0) substrate at low temperatures. Nitrogen (N2) and hydrogen (H2) were used as gas precursors. The results show that by using AlCl3 as the aluminum source AlN films with preferential orientation can be obtained under negative bias assistance by Cat-CVD. The effects of the bias during the deposition process are discussed in details
Additional details
Identifiers
- DOI
- 10.1016/j.mseb.2003.10.085;
- PII
- S0921510703005841;
Publishing Information
- Journal Title
- Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
- Journal Volume
- 107
- Journal Issue
- 2
- Journal Page Range
- p. 161-165
- ISSN
- 0921-5107
- CODEN
- MSBTEK
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37044709
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINIUM CHLORIDES; ALUMINIUM NITRIDES; CHEMICAL VAPOR DEPOSITION; FILMS; HYDROGEN; NITROGEN; ORIENTATION; SILICON; SOLIDS; SUBSTRATES
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CHEMICAL COATING; CHLORIDES; CHLORINE COMPOUNDS; DEPOSITION; ELEMENTS; HALIDES; HALOGEN COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; PNICTIDES; SEMIMETALS; SURFACE COATING
Optional Information
- Copyright
- Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.