Published March 15, 2004 | Version v1
Journal article

Oriented AlN films prepared with solid AlCl3 source by bias assisted Cat-CVD

Description

In this paper, aluminum nitride (AlN) films have been successfully synthesized by taking solid AlCl3 as the source of atomic aluminum, with negative bias assisted catalytic chemical vapor deposition (Cat-CVD) on Si(1 0 0) substrate at low temperatures. Nitrogen (N2) and hydrogen (H2) were used as gas precursors. The results show that by using AlCl3 as the aluminum source AlN films with preferential orientation can be obtained under negative bias assistance by Cat-CVD. The effects of the bias during the deposition process are discussed in details

Additional details

Identifiers

DOI
10.1016/j.mseb.2003.10.085;
PII
S0921510703005841;

Publishing Information

Journal Title
Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
Journal Volume
107
Journal Issue
2
Journal Page Range
p. 161-165
ISSN
0921-5107
CODEN
MSBTEK

Optional Information

Copyright
Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.