Ion microscopy based on laser-cooled cesium atoms
Creators
- 1. Orsay Physics, TESCAN Orsay, 95 Avenue des Monts Auréliens – ZA Saint-Charles – 13710 Fuveau (France)
- 2. Laboratoire Aimé Cotton, CNRS, Université Paris-Sud, ENS Cachan, Bât. 505, 91405 Orsay (France)
- 3. Dipartimento di Fisica, Università di Pisa, Largo Pontecorvo 3, 56127 Pisa (Italy)
- 4. Consorzio Nazionale Interuniversitario per le Scienze Fisiche della Materia, CNISM, Sezione di Pisa, 56127 Pisa (Italy)
- 5. Istituto Nazionale di Ottica, INO-CNR, U.O.S. "Adriano Gozzini", via Moruzzi 1, 56124 Pisa (Italy)
Description
We demonstrate a prototype of a Focused Ion Beam machine based on the ionization of a laser-cooled cesium beam and adapted for imaging and modifying different surfaces in the few-tens nanometer range. Efficient atomic ionization is obtained by laser promoting ground-state atoms into a target excited Rydberg state, then field-ionizing them in an electric field gradient. The method allows obtaining ion currents up to 130 pA. Comparison with the standard direct photo-ionization of the atomic beam shows, in our conditions, a 40-times larger ion yield. Preliminary imaging results at ion energies in the 1–5 keV range are obtained with a resolution around 40 nm, in the present version of the prototype. Our ion beam is expected to be extremely monochromatic, with an energy spread of the order of the eV, offering great prospects for lithography, imaging and surface analysis. - Highlights: • We realize a Focused Ion Beam with an ionic source based on laser cooled cesium atoms. • Ionization involves excitation of the laser cooled atoms to Rydberg states. • We use the cesium FIB system to image different materials. • We use the cesium FIB to produce permanent modifications on surfaces. • In the present configuration, the focused probe size of the cesium FIB prototype is about 300 nm for beam energies in the 2–5 keV range.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.ultramic.2015.12.007Additional details
Identifiers
- DOI
- 10.1016/j.ultramic.2015.12.007;
- PII
- S0304-3991(15)30088-7;
Publishing Information
- Journal Title
- Ultramicroscopy (Amsterdam)
- Journal Volume
- 164
- Journal Page Range
- p. 70-77
- ISSN
- 0304-3991
- CODEN
- ULTRD6
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48021844
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ATOMIC BEAMS; ATOMS; ELECTRIC FIELDS; EXCITATION; GROUND STATES; ION BEAMS; ION MICROSCOPY; IONIZATION; KEV RANGE 01-10; LASERS; MONOCHROMATIC RADIATION; RESOLUTION; RYDBERG STATES
- Descriptors DEC
- BEAMS; ELECTROMAGNETIC RADIATION; ENERGY LEVELS; ENERGY RANGE; ENERGY-LEVEL TRANSITIONS; EXCITED STATES; KEV RANGE; MICROSCOPY; RADIATIONS
Optional Information
- Copyright
- Copyright (c) 2016 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.