Published 1999 | Version v1
Miscellaneous Open

Structure and density for As23Se67Ge10 amorphous films

  • 1. Uzhgorod State University, Uzhgorod (Ukraine)

Description

The effect of thermal annealing and argon laser irradiation on structure and volume for thin amorphous As23Se67Ge10 films deposited by thermal evaporation has been investigated. The short-range structure for the annealed films has been found to be more ordered as compared to the irradiated films. The decrease in film volume under thermal annealing and its increase under laser irradiation have been shown. The changes in film volume have been discussed in the context of non-ergodic model for the amorphous state equilibrium taking into account forces acting from the substrate

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Part of:
3. International Symposium 'Vacuum Technology and Equipment'. ISVTE-3

Additional details

Additional titles

Original title (English)
3. Mezhdunarodnyj Simpozium 'Vakuumnye tekhnologii i oborudovanie'. ISVTE-3

Publishing Information

Imprint Title
3. International Symposium 'Vacuum Technology and Equipment'. ISVTE-3
Imprint Pagination
174 p.
Journal Page Range
p. 195-199
Report number
INIS-UA--071(V.2)

Conference

Title
3. International Symposium 'Vacuum Technology and Equipment', Vol. 2
Original Conference Title
Trudy tret'ego mezhdunarodnogo simpoziuma 'Vakuumnye tekhnologii i oborudovanie', Tom 2
Dates
22-24 Sep 1999
Place
Khar'kov (Ukraine)

INIS

Country of Publication
Ukraine
Country of Input or Organization
Ukraine
INIS RN
32051680
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
AMORPHOUS STATE; ANNEALING; ARSENIC ALLOYS; ELECTRON MICROSCOPY; GERMANIUM ALLOYS; LASER RADIATION; MICROSTRUCTURE; SELENIDES; SUBSTRATES; VAPOR DEPOSITED COATINGS
Descriptors DEC
ALLOYS; CHALCOGENIDES; COATINGS; ELECTROMAGNETIC RADIATION; HEAT TREATMENTS; MICROSCOPY; RADIATIONS; SELENIUM COMPOUNDS

Optional Information

Notes
Imprint:3. Mezhdunarodnyj Simpozium 'Vakuumnye tekhnologii i oborudovanie'. ISVTE-3