Published 2002 | Version v1
Miscellaneous Metadata-only

Analysis of strain relaxation in InxGa1-xAs1-yNy/GaAs multilayer structures by X-ray two-crystal diffractometry

Creators

  • 1. Optoelectronic Research Centre, Tampere University of Technology, Tampere (Finland)
  • 2. Chernivtsi National University, by Yuriy Fedkovich, Chernivtsi (Ukraine)
  • 3. Institute of Metal Physics by Kurdumov, Kiev (Ukraine)

Description

no abstract available

Part of:
Abstracts of International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2002

Additional details

Publishing Information

Imprint Title
Abstracts of International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2002
Imprint Pagination
174 p.
Journal Page Range
p. 73

Conference

Title
4. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2002
Dates
10-13 Jun 2002
Place
Kazimierz Dolny (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
34075134
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract, Conference, Non-conventional Literature
Descriptors DEI
ARSENIDES; CHEMICAL COMPOSITION; GALLIUM ARSENIDES; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LAYERS; MOLECULAR BEAM EPITAXY; NITRIDES; PHOTOLUMINESCENCE; SPATIAL DISTRIBUTION; STRESS RELAXATION; SUBSTRATES; TRACE AMOUNTS; X-RAY DIFFRACTION
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; DISTRIBUTION; EMISSION; EPITAXY; GALLIUM COMPOUNDS; LUMINESCENCE; NITROGEN COMPOUNDS; PHOTON EMISSION; PNICTIDES; RELAXATION; SCATTERING

Optional Information