Published 2003
| Version v1
Miscellaneous
Wide-bandgap group-III-nitride-based diode lasers - overview of present status
Creators
- 1. Center for High Technology Materials, University of New Mexico, Albuquerque (United States)
Description
no abstract available
Additional details
Publishing Information
- Imprint Title
- Abstracts of 17. School of Optoelectronics - Photovoltaics, Solar Calls and Detectors
- Imprint Pagination
- 88 p.
- Journal Page Range
- p. 28
Conference
- Title
- 17. School of Optoelectronics - Photovoltaics, Solar Calls and Detectors
- Dates
- 13-16 Oct 2003
- Place
- Kazimierz Dolny (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 35061804
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- ALLOYS; ALUMINIUM COMPOUNDS; ALUMINIUM NITRIDES; EMISSION SPECTRA; ENERGY GAP; GALLIUM COMPOUNDS; GALLIUM NITRIDES; INDIUM COMPOUNDS; INDIUM NITRIDES; LASERS; LIGHT EMITTING DIODES; PHOSPHIDES
- Descriptors DEC
- ALUMINIUM COMPOUNDS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; PHOSPHORUS COMPOUNDS; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SPECTRA