Strain field of the monovacancy in silicene: First-principles study
Creators
- 1. College of Physics and Electronic Information, Luoyang Normal University, Luoyang, 471022 (China)
Description
The in-plane strain fields of single-vacancy silicene with different monovacancy (MV) concentrations, as well as the corresponding electronic band structures, are investigated by using the first-principle calculations. Firstly the self-healing MV is found to be the most stable ground structure in silicene, which is different from the other 2D hexagonal honeycomb materials, e.g. graphene, h-BN. In the isolated MV center, the bonds along the pentagons are compressed, creating a compress field, and those close to the distorted hexagons are stretched, creating a stretch field. As the MV concentration increasing, the interacted compress field tends to corrugate the defected silicene, while the interacted stretch field impacts little on the low-buckled structure. Especially, the corrugation presents in those supercells with small MV concentration, just as the (4, 5), (4, 6), (4, 7), (4, 8) supercells. The corrugations approach zero at both low and high MV concentrations, and the (4, 6) supercell with a MV concentration of about 0.021, has a peak value of 3.23Å. The electronic calculations show that the linear dispersion at Γ point in pristine silicene is broken by the lower lattice symmetry of the self-healing MV reconstruction, which translates it into metal as well.
Additional details
Identifiers
- DOI
- 10.1063/1.4948980;
Publishing Information
- Journal Title
- AIP Advances
- Journal Volume
- 6
- Journal Issue
- 5
- Journal Page Range
- p. 055204-055204.8
- ISSN
- 2158-3226
- CODEN
- AAIDBI
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48057893
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- BORON NITRIDES; CONCENTRATION RATIO; DEFECTS; DISPERSIONS; GRAPHENE; HEALING; METALS; NANOSTRUCTURES; SILICENE; SIMULATION; STRAINS; SYMMETRY; VACANCIES
- Descriptors DEC
- BIOLOGICAL RECOVERY; BORON COMPOUNDS; CARBON; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIMENSIONLESS NUMBERS; ELEMENTS; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; PNICTIDES; POINT DEFECTS; SEMIMETALS; SILICON
Optional Information
- Notes
- (c) 2016 Author(s)