Effect of radiation-induced ordering in Si-SiO2 structures under ion- and plasma-thermal treatments

The effect of radiation stimulated ordering in Si-SiO2 structures has been observed, which consists in a substantial reduction of the density of the electrically active defects localized both at the Si-SiO2 interface and within the dielectric layer. This effect is a result of a combined treatment by low-energy ion bombardment (or in gas plasma) and a subsequent low-temperature annealing. A detailed study of the effect mentioned under various experimental conditions and using different Si-SiO2 structures has made it possible to optimize the necessary regimes and to propose the physical mechanisms responsible for the radiation stimulated ordering in layer structures similar to that of Si-SiO2